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IRF6628TR1PBF

Part No IRF6628TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 27A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 27A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 47nC @ 4.5V
Max Input Capacitance 3770pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 96W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 27A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 125642-IRF6628TR1PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6628TR1PBF CAD Model

Description

The Infineon Technologies IRF6628TR1PBF is a N-Channel MOSFET transistor with a DirectFET MX case/package.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 27A (Ta), 160A (Tc)
  • Maximum Rds On at Id,Vgs: 2.5 mOhm @ 27A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Product Category: Discrete Semiconductor Products
  • Status: Commonly used
  • Supply and Demand Status: Limited due to its obsolete status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.3019 $59.8494
62+ $1.8884 $117.0808
95+ $1.8295 $173.8025
131+ $1.7706 $231.9486
169+ $1.7117 $289.2773
226+ $1.5350 $346.9100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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