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Same model may have multiple batches, images only for reference.
IPDH5N03LA G Real Image
Same model may have multiple batches, images only for reference.

IPDH5N03LA G

Part No IPDH5N03LA G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A DPAK
Datasheet
IPDH5N03LA G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 35μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 138997-IPDH5N03LA G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPDH5N03LA G CAD Model

Description

The Infineon Technologies IPDH5N03LA G is an N-Channel MOSFET transistor that is suitable for use in discrete semiconductor products.

  • Power Dissipation: 83W (Tc)
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 35μA
  • Maximum Gate Charge: 22nC @ 5V
  • Maximum Input Capacitance: 2653pF @ 15V
  • Maximum Rds On @ Id, Vgs: 5.2 mOhm @ 50A, 10V
  • Supply and Demand Status: limited

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75+ $1.5581 $116.8575
115+ $1.5084 $173.4660
160+ $1.4599 $233.5840
205+ $1.4114 $289.3370
275+ $1.2659 $348.1225
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