The Fairchild/ON Semiconductor FQI3N90 is an N-channel MOSFET that can dissipate up to 3.13W (Ta), 130W (Tc) of power. It has a maximum drain-source breakdown voltage of 900V and can operate in a temperature range of -55°C to 150°C (TJ). The device is packaged in an I2PAK case and has a TO-262-3 Long Leads, I2Pak, TO-262AA dimension.

• Continuous Drain Current: 3.6A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 5V @ 250μA
• Rds On (Max): 4.25 Ohm @ 1.8A, 10V
• Category: Discrete semiconductor products
• Status: Obsolete (EOL)
• Alternative Parts: FQI3N90TU, STB3NC90Z-1, 2SK1867, FQI3N90
• Supply and Demand: Limited