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DMP2069UFY4-7

Part No DMP2069UFY4-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.5A 3-DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 9.1nC @ 4.5V
Max Input Capacitance 214pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 530mW (Ta)
Maximum Rds On at Id,Vgs 54 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2015H4-3
Dimension 3-XFDFN
Win Source Part Number 014477-DMP2069UFY4-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMP2069UFY4-7 CAD Model

Description

Introducing the DMP2069UFY4-7 from Diodes Incorporated

The DMP2069UFY4-7 is a cutting-edge P-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed for power management applications and is an ideal choice for a variety of electronic devices due to its efficiency and reliability.

The DMP2069UFY4-7 boasts an impressive continuous drain current of -2.6A and a -20V drain-source breakdown voltage, which ensures that the device can handle significant power and voltage without sacrificing performance. Its low threshold voltage makes it suitable for low voltage applications, providing designers with greater flexibility in their circuit designs.

One of the key features of this MOSFET is its ultra-small form factor. Housed in a compact X2-DFN2020-6 package, it occupies minimal space on a printed circuit board (PCB), making it an excellent choice for space-constrained applications such as portable electronics, wearables, and IoT devices. Despite its small size, the DMP2069UFY4-7 does not compromise on power dissipation, with a thermal resistance that ensures stability and longevity even under high operating temperatures.

Furthermore, the DMP2069UFY4-7 is characterized by its low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency. This feature is particularly beneficial in applications where energy conservation is paramount, such as battery-powered devices.

For ease of integration into various design schematics, the DMP2069UFY4-7 also includes built-in ESD protection, safeguarding the device from electrostatic discharges that could otherwise damage sensitive electronic components. This inherent protection feature enhances the reliability and durability of the end product.

Diodes Incorporated's commitment to quality is evident in the DMP2069UFY4-7, which is manufactured using the company's advanced process technology. This ensures that each MOSFET meets the highest standards of performance and consistency, providing engineers with confidence in their designs.

In conclusion, the DMP2069UFY4-7 from Diodes Incorporated represents a blend of miniaturization, power handling, and efficiency. Its robust feature set makes it an ideal choice for designers looking to optimize their power management solutions across a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1817 $58.1440
775+ $0.1491 $115.5525
1,200+ $0.1445 $173.4000
1,655+ $0.1398 $231.3690
2,140+ $0.1351 $289.1140
2,860+ $0.1212 $346.6320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,380 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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