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ZXMN2AM832TA

Part No ZXMN2AM832TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 2.9A 8MLP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A
Maximum Rds On at Id,Vgs 120 mOhm @ 4A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA (Min)
Max Gate Charge 3.1nC @ 4.5V
Max Input Capacitance 299pF @ 15V
Maximum Power Dissipation 1.7W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MLP (3x2)
Win Source Part Number 044172-ZXMN2AM832TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN2AM832TA CAD Model

Description

Introducing the ZXMN2AM832TA - A High-Efficiency MOSFET by Diodes Incorporated

The ZXMN2AM832TA is a cutting-edge N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is engineered to deliver high-efficiency power management and conversion for a variety of applications.

Constructed with the latest trench MOSFET technology, the ZXMN2AM832TA boasts an ultra-low on-resistance (R<sub>DS(on)), which significantly reduces power losses and enhances overall device efficiency. This makes it an ideal choice for power supply applications where energy conservation is paramount.

Key Features of the ZXMN2AM832TA

  • Low Threshold Voltage: The device features a low threshold voltage, ensuring it can be driven at lower gate voltages, which is beneficial for battery-operated devices and low-voltage applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), the ZXMN2AM832TA can handle significant power, making it suitable for high-power applications.
  • Thermal Performance: The MOSFET's excellent thermal performance ensures reliability and longevity, even under high temperature operating conditions.
  • Surface Mount Package: The ZXMN2AM832TA comes in a compact SOT23 package, which is perfect for space-constrained applications and allows for efficient automated assembly.

Applications

The versatility of the ZXMN2AM832TA MOSFET makes it an excellent choice for a wide range of applications, including:

  • Power management in portable and battery-powered devices
  • DC-DC converters
  • Load switches
  • Motor control circuits
  • Power amplifiers

Diodes Incorporated's commitment to quality ensures that the ZXMN2AM832TA MOSFET meets the highest standards for performance and reliability. Whether you're designing power supplies for consumer electronics, industrial systems, or automotive applications, the ZXMN2AM832TA is engineered to provide efficient, reliable operation in a compact form factor.

Choose the ZXMN2AM832TA for your next project, and benefit from the performance and efficiency that Diodes Incorporated's products consistently deliver.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6269 $59.5555
225+ $0.5144 $115.7400
350+ $0.4983 $174.4050
480+ $0.4823 $231.5040
620+ $0.4662 $289.0440
830+ $0.4179 $346.8570
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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