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Same model may have multiple batches, images only for reference.
HUF76639S3ST Real Image
Same model may have multiple batches, images only for reference.

HUF76639S3ST

Part No HUF76639S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 51A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 51A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 111012-HUF76639S3ST
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HUF76639S3ST CAD Model

Description

The Fairchild/ON Semiconductor HUF76639S3ST is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 51A at 25°C
  • Power Dissipation: 180W
  • Gate-Source Threshold Voltage: 3V at 250μA
  • Gate Charge: 86nC at 10V
  • Package: D2PAK (TO-263AB)
  • Mounting: Surface Mount Technology (SMT)

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