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MUR20005CTR
Same model may have multiple batches, images only for reference.

MUR20005CTR

Part No MUR20005CTR
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE MODULE 50V 100A 2TOWER  /  Diode Array 1 Pair Common Anode Schottky 50 V 100A Chassis Mount Twin Tower
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr GeneSiC Semiconductor
Package Bulk
Product Status Obsolete
Diode Configuration 1 Pair Common Anode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) (per Diode) 100A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 100 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 25 µA @ 50 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Twin Tower
Supplier Device Package Twin Tower
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Other Names MUR20005CTRGN
Standard Package 25
Win Source Part Number 1081151-MUR20005CTR
Ultra Librarian 3D Model Ultra Librarian MUR20005CTR CAD Model

Description

The GeneSiC Semiconductor MUR20005CTR is a Schottky diode with a current rating of 100A and a reverse leakage current of 25μA @ 50V.

  • Current Rating: 100A
  • Reverse Leakage Current: 25μA @ 50V
  • Voltage Drop: 1.3V @ 100A
  • Reverse Recovery Time: 75ns
  • Package: Twin tower package
  • Mounting Type: Chassis mounted
  • Operating Temperature Range: -55°C to 150°C
  • Category: Discrete semiconductor products
  • Status: Obsolete

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