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RFP12N06RLE

Name: RFP12N06RLE
Brand: Harris Corporation
SKU: 294075
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	RFP12N06RLE
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Harris Corporation
Series	UltraFET™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	485 pF @ 25 V
Power Dissipation (Max)	49W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	294075-RFP12N06RLE
Ultra Librarian 3D Model	Ultra Librarian RFP12N06RLE CAD Model

Alternative Products

Description

The RFP12N06RLE is a single N-channel MOSFET transistor from Harris Corporation.

Series: UltraFET™
Package: Bulk, Standard (1 piece)
Mounting Type: Through-Hole
Package/Case: TO-220-3
Vdss (Drain to Source Voltage): 60V
Id (Continuous Drain Current) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Qg (Gate Charge) @ 10V: 15nC
Ciss (Input Capacitance) @ 25V: 485pF
Product Status: Active

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