The HY62UF16201ALLF-55IDR is a high-speed, low-power CMOS Static RAM (SRAM) manufactured by Hynix Semiconductor. This memory device is designed for applications requiring fast access times and efficient power consumption. It is organized as 1M x 16 bits, providing a total memory capacity of 16 Megabits.

Applications

• Networking equipment
• Telecommunications systems
• Industrial control systems
• Embedded systems
• Cache memory for microprocessors

Features

• High-speed access time: 55 ns
• Low power consumption
• Single 3.3V power supply
• Operating Current: 90 mA (typical)
• Standby Current: 10 uA (typical)
• TTL compatible inputs and outputs
• Data retention voltage: 2V (minimum)
• Operating Temperature: -40°C to +85°C
• Package: 48-pin TSOP

Benefits

• Fast data access enables high-performance computing and data processing.
• Low power consumption extends battery life in portable devices and reduces overall system power requirements.
• Wide operating temperature range allows for reliable operation in harsh environments.
• The compact TSOP package saves board space and simplifies system design.
• High reliability ensures long-term system stability.

Technical Specifications

The HY62UF16201ALLF-55IDR operates with a single 3.3V power supply and features a typical access time of 55ns. It supports TTL-compatible inputs and outputs and offers low standby current to minimize power consumption when not actively accessing memory. The device is available in a 48-pin TSOP package.

This SRAM is particularly suitable for applications requiring fast read and write cycles, such as cache memory in embedded systems or data buffering in communication devices. Its low power consumption makes it a good choice for battery-powered applications.