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AUIRFS4310Z

Part No AUIRFS4310Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUIRFS4310 - 75V-100V N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6860 pF @ 50 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) Vendor Undefined
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567178-AUIRFS4310Z
Ultra Librarian 3D Model Ultra Librarian AUIRFS4310Z CAD Model

Description

The AUIRFS4310Z is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • Application: Discrete Semiconductor
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 120A
  • Rds On (Max) @ 75A, 10V: 6mOhm
  • Gate Charge (Qg) @ 10V: 170nC
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak
  • Power Dissipation: 250W
  • Operating Temperature: -55°C to 175°C
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0178 $60.5340
70+ $1.6551 $115.8570
110+ $1.6043 $176.4730
150+ $1.5523 $232.8450
195+ $1.5003 $292.5585
260+ $1.3456 $349.8560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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