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Same model may have multiple batches, images only for reference.
IPI26CN10N G Real Image
Same model may have multiple batches, images only for reference.

IPI26CN10N G

Part No IPI26CN10N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A TO262-3
Datasheet
IPI26CN10N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 39μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 2070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1045924-IPI26CN10N G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI26CN10N G CAD Model

Description

The 1045924-IPI26CN10N G is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 100V and Continuous Drain Current @ 25°C of 35A (Tc) from Infineon Technologies.

  • Maximum power dissipation: 71W (Tc)
  • Maximum Rds On @ Id,Vgs: 26 mOhm @ 35A, 10V
  • Drive voltage: 10V
  • Mounted through hole
  • Technology used: MOSFET
  • Comes in PG-TO262-3 package
  • Maximum gate-source voltage: ±20V
  • Maximum gate charge: 31nC @ 10V
  • Categorized under Discrete Semiconductor Products
  • An Obsolete(EOL) product
  • Product is ideal for applications that require high voltage and high current

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