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Same model may have multiple batches, images only for reference.
IPS075N03LGAKMA1 Real Image
Same model may have multiple batches, images only for reference.

IPS075N03LGAKMA1

Part No IPS075N03LGAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO251-3-11
Datasheet
IPS075N03LGAKMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 1900pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1046061-IPS075N03LGAKMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPS075N03LGAKMA1 CAD Model

Description

Infineon Technologies presents IPS075N03LGAKMA1, an N-Channel MOSFET with a maximum power dissipation of 47W @ Tc.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Package: PG-TO251-3
  • Mounting: Through Hole
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
170+ $0.3441 $58.4970
410+ $0.2824 $115.7840
635+ $0.2735 $173.6725
875+ $0.2647 $231.6125
1,130+ $0.2559 $289.1670
1,515+ $0.2294 $347.5410
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Availability: 10,300 pieces
MOQ: 170 pcs
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