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Same model may have multiple batches, images only for reference.
IRF8313TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8313TRPBF

Part No IRF8313TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 9.7A 8-SOIC
Datasheet
IRF8313TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.7A
Maximum Rds On at Id,Vgs 15.5 mOhm @ 9.7A, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 9nC @ 4.5V
Max Input Capacitance 760pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017544-IRF8313TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF8313TRPBF CAD Model

Description

The Infineon Technologies 017544-IRF8313TRPBF is a dual N-channel FET with a logic level gate.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9.7A @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 9nC @ 4.5V
  • Maximum Input Capacitance: 760pF @ 15V
  • Maximum Rds On @ Id,Vgs: 15.5 mOhm @ 9.7A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Packaging Type: reel - TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3760 $52.2720
45+ $2.2256 $100.1520
70+ $2.1504 $150.5280
100+ $2.0000 $200.0000
130+ $1.9249 $250.2370
163+ $1.8497 $301.5011
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,710 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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