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IRGP4750DPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4750DPBF

Part No IRGP4750DPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 650V TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 105A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 35A
Maximum Power 273W
Switching Energy 1.3mJ (on), 500μJ (off)
Input Type Standard
Gate Charge 105nC
Td (on/off) at 25°C 50ns/105ns
Test Condition 400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr) 150ns
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1188377-IRGP4750DPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGP4750DPBF CAD Model

Description

The Infineon Technologies IRGP4750DPBF is an obsolete device that comes in a TO-247AC package with a mounting style of through-hole.

  • Package: TO-247AC
  • Mounting Style: through-hole
  • Current: 70A
  • Voltage: 650V
  • ECCN: EAR99
  • Power (max): 273W
  • Switching Energy (On): 1.3mJ
  • Switching Energy (Off): 500μJ
  • Supply and Demand Status: balanced
  • Manufacturer Pack Quantity: 25

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $14.4146 $72.0730
11+ $11.8274 $130.1014
17+ $11.4587 $194.7979
24+ $11.0888 $266.1312
31+ $10.7187 $332.2797
41+ $9.6102 $394.0182
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 340 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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