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Same model may have multiple batches, images only for reference.
IRLR3705Z Real Image
Same model may have multiple batches, images only for reference.

IRLR3705Z

Part No IRLR3705Z
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Specifically designed for Automotive applications,this HEXFET Power MOSFET | MOSFET N-CH 55V 42A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 42A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 8mOhm at 42A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 66nC at 5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 2900pF at 25V
Power Dissipation (Maximum) 130W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188628-IRLR3705Z
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLR3705Z CAD Model

Description

The IRLR3705Z is a discrete semiconductor product from Infineon Technologies that is a MOSFET transistor with an N-channel polarity.

  • Mounting Style: SMD
  • Supplier Device Package: D-Pak
  • Temperature Range: -55°C ~ 175°C
  • Maximum Power Dissipation: 130W
  • Gate-Source Voltage (th) (maximum) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 66nC @ 5V
  • Input Capacitance (Ciss) (maximum) @ Vds: 2900pF @ 25V

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Quantity Unit Price Ext. Price
60+ $0.8429 $50.5740
145+ $0.6916 $100.2820
225+ $0.6700 $150.7500
310+ $0.6484 $201.0040
400+ $0.6268 $250.7200
535+ $0.5620 $300.6700
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Availability: 20,000 pieces
MOQ: 60 pcs
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