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Same model may have multiple batches, images only for reference.
SPP04N60C2 Real Image
Same model may have multiple batches, images only for reference.

SPP04N60C2

Part No SPP04N60C2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Datasheet
SPP04N60C2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 22.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 897151-SPP04N60C2
Ultra Librarian 3D Model Ultra Librarian SPP04N60C2 CAD Model

Description

The 897151-SPP04N60C2 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Vdss: 600V
  • Id: 4.5A @ 25°C
  • Rds On: 950mOhm @ Id=2.8A, Vgs=10V
  • Qg: 22.9nC @ Vgs=10V
  • Package Type: TO-220-3
  • Mounting Type: Through Hole
  • Power Dissipation: 50W @ Tc=25°C
  • Operating Temperature: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
12+ $4.8522 $58.2264
30+ $3.9813 $119.4390
45+ $3.8565 $173.5425
62+ $3.7318 $231.3716
81+ $3.6082 $292.2642
108+ $3.2352 $349.4016
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Availability: 2,520 pieces
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