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Same model may have multiple batches, images only for reference.
APT30M85BVRG Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT30M85BVRG

Part No APT30M85BVRG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 40A TO-247
Datasheet
APT30M85BVRG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 195nC @ 10V
Max Input Capacitance 4950pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Dimension TO-247-3
Win Source Part Number 1018029-APT30M85BVRG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT30M85BVRG CAD Model

Description

The 1018029-APT30M85BVRG is an N-channel MOSFET discrete semiconductor product manufactured by Microsemi Corporation.

  • Channel Type: N-channel
  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Quantity Per Package: 1
  • Packaging: Tube/Rail
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Status: Active
  • Case/Package: TO-247 [B]

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.6343 $62.5372
10+ $12.8283 $128.2830
14+ $12.4273 $173.9822
20+ $12.0265 $240.5300
25+ $11.6255 $290.6375
34+ $10.4230 $354.3820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,400 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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