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2SA1006B

Part No 2SA1006B
Manufacturer NEC
Catalog Transistors (BJT) - Single
Description PNP/NPN SILICON EPITAXIAL TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer NEC
Win Source Part Number 1124336-2SA1006B
Manufacturer Homepage www.nec.com/
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Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1006B CAD Model

Description

The 2SA1006B is a PNP silicon epitaxial planar transistor manufactured by NEC (now Renesas Electronics). This transistor is designed for use in low-noise amplifier and audio frequency applications. It is known for its excellent linearity and low distortion characteristics.

Applications:

  • Low-Noise Amplifiers
  • Audio Amplifiers
  • Pre-Amplifier Stages
  • Mixer Circuits
  • Oscillator Circuits

Features:

  • PNP Transistor
  • Low Noise Figure
  • High Current Gain
  • Excellent Linearity
  • Small Signal Amplifier

Benefits:

  • High-Quality Audio Reproduction: The low-noise characteristics ensure clear and accurate audio amplification with minimal distortion.
  • Improved Signal Sensitivity: Enables the amplification of weak signals without introducing significant noise, enhancing overall system performance.
  • Stable Performance: Provides consistent and reliable operation in various audio and small signal applications.
  • Versatile Use: Suitable for a wide range of audio and instrumentation equipment due to its excellent electrical characteristics.
  • Enhanced Design Flexibility: Offers designers flexibility in creating high-performance audio circuits.

Additional Details:

The 2SA1006B features a collector-emitter voltage (VCEO) of -50V and a collector current (IC) of -50mA. Consult the datasheet for detailed electrical characteristics such as the base-emitter voltage (VBE), collector-base voltage (VCB), and DC current gain (hFE) at specified operating points. The typical noise figure for this transistor is quite low, making it well-suited for sensitive amplifier stages. Proper biasing techniques are essential to achieve optimal performance and minimize distortion. The transistor’s transition frequency (fT) provides insight into its high-frequency capabilities. Thermal considerations are typically not a major concern for low-power transistors like the 2SA1006B but should still be reviewed for demanding applications. Ensure adherence to the storage and operating temperature ranges specified by the manufacturer. The device’s capacitance characteristics (e.g., input capacitance, output capacitance) can also influence circuit performance. Care should be taken to avoid exceeding the maximum voltage and current ratings to prevent damage to the transistor. The datasheet typically includes detailed graphs illustrating the transistor's performance characteristics under varying operating conditions.

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