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2SD1001

Part No 2SD1001
Manufacturer NEC
Catalog Hard To Find
Description NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Sample
Rohs State rohs
ECAD Module
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Manufacturer NEC
Win Source Part Number 1126108-2SD1001
Manufacturer Homepage www.nec.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD1001 CAD Model

Description

The 2SD1001 is a silicon NPN epitaxial planar transistor manufactured by NEC. This transistor is designed for use in high-speed switching and amplifier applications. It offers a good balance of voltage, current, and switching speed, making it suitable for a variety of electronic circuits.

Applications

  • High-Speed Switching Circuits: Used in switching power supplies, DC-DC converters, and other high-speed switching applications.
  • Amplifier Circuits: Employed in audio amplifiers, RF amplifiers, and other amplifier circuits requiring high gain and low distortion.
  • Motor Control Circuits: Utilized in motor control circuits for controlling the speed and direction of DC motors.
  • Inverter Circuits: Integrated into inverter circuits for converting DC voltage to AC voltage.
  • Lighting Control: Used in electronic ballast circuits for fluorescent lamps and LED lighting systems.

Features

  • High Collector-Emitter Voltage (VCEO): Offers a high collector-emitter voltage rating, allowing for use in high-voltage applications.
  • High Collector Current (IC): Supports a high collector current, making it suitable for driving high-power loads.
  • Fast Switching Speed: Provides a fast switching speed, enabling efficient operation in high-frequency circuits.
  • Low Saturation Voltage (VCE(sat)): Features a low saturation voltage, minimizing power dissipation and improving efficiency.
  • High Current Gain (hFE): Offers a high current gain, ensuring good amplification performance.
  • Epitaxial Planar Construction: Uses epitaxial planar construction for improved performance and reliability.

Benefits

  • Efficient Switching: Fast switching speed enables efficient operation in switching circuits, reducing power losses.
  • High Power Capability: High collector current and voltage ratings allow for driving high-power loads.
  • Good Amplification Performance: High current gain ensures good amplification performance in amplifier circuits.
  • Low Power Dissipation: Low saturation voltage minimizes power dissipation, improving efficiency and reducing heat generation.
  • Reliable Operation: Epitaxial planar construction ensures robust and reliable operation in various applications.

The 2SD1001 transistor is a versatile component that can be used in a wide range of electronic circuits. Its high voltage and current ratings, fast switching speed, and good amplification performance make it a suitable choice for high-speed switching and amplifier applications. Key specifications include a collector-emitter voltage (VCEO) of typically 80V, a collector current (IC) of typically 1A and a transition frequency (fT) of typically 80 MHz.

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1513 $58.2505
930+ $0.1247 $115.9710
1,430+ $0.1213 $173.4590
1,985+ $0.1167 $231.6495
2,555+ $0.1132 $289.2260
3,410+ $0.1016 $346.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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