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NP82N055NUG-S18-AY

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Part No	NP82N055NUG-S18-AY
Manufacturer	NEC
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 82A TO262 / N-Channel 55 V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole TO-262
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	NEC Corporation
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Rds On (Max) @ Id, Vgs	6mOhm @ 41A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9600 pF @ 25 V
Power Dissipation (Max)	1.8W (Ta), 143W (Tc)
Temperature Range - Operating	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-NP82N055NUG-S18-AY-NEC,RENNECNP82N055NUG-S18-AY
Standard Package	50
Win Source Part Number	1082629-NP82N055NUG-S18-AY
Ultra Librarian 3D Model	Ultra Librarian NP82N055NUG-S18-AY CAD Model

Alternative Products

Description

The NEC MOSFET (Metal Oxide) transistor is a high-performance N-Channel FET type electronic component.

Drain to Source Voltage (Vdss): 55V
Continuous Drain Current (Id): 82A (Tc) @ 25°C
Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Mounting: through hole
Package/Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Application: discrete semiconductor products, specifically transistors - FETs, MOSFETs - Single

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