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Manufacturer NEC
Win Source Part Number 389267-UPA1915TE-T
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA1915TE-T CAD Model

Description

The UPA1915TE-T is a P-channel power MOSFET from Renesas (formerly NEC Electronics), designed for efficient switching and load control applications. Its key characteristic is the low on-state resistance, which minimizes power losses and maximizes overall efficiency. The compact design makes it suitable for a range of power management solutions where space is a constraint.

Applications:

  • Power Supplies: Used in DC-DC converters and voltage regulators for efficient power conversion.
  • Load Switching: Suitable for controlling various loads in electronic systems.
  • Battery Management Systems: Found in battery charging and discharging circuits.
  • Portable Devices: Employed in smartphones, tablets, and other portable electronic devices.
  • LED Lighting: Utilized in LED drivers and control circuits for efficient lighting solutions.

Features:

  • P-Channel MOSFET: Provides convenient drive characteristics for specific circuit designs.
  • Low On-State Resistance (RDS(on)): Reduces power dissipation and enhances efficiency.
  • High-Speed Switching: Enables efficient operation in high-frequency switching applications.
  • Small Surface Mount Package: Allows for compact and space-saving designs.
  • RoHS Compliant: Meets environmental regulations for hazardous substances.

Benefits:

  • Enhanced Efficiency: Low RDS(on) minimizes power losses, leading to improved efficiency.
  • Reduced Heat Dissipation: Lower power dissipation results in less heat generation and increased system reliability.
  • Compact Design: Small package enables smaller and more compact devices.
  • Improved Performance: Fast switching speeds contribute to enhanced dynamic performance.
  • Environmentally Friendly: RoHS compliance ensures minimal environmental impact.

Technical Specifications: The UPA1915TE-T features a drain-source voltage (VDS) rating, gate-source voltage (VGS) rating, continuous drain current (ID) rating, and pulsed drain current (IDM) rating. These values vary depending on the datasheet. Other key parameters include the gate threshold voltage (VGS(th)), input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss). Consult the official Renesas datasheet for detailed specifications relevant to your application.

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