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Same model may have multiple batches, images only for reference.
BU406D Mospec
Same model may have multiple batches, images only for reference.

BU406D

Part No BU406D
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN 200V 7A TO220
Datasheet
BU406D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 7 A
Voltage - Collector Emitter Breakdown (Max) 200 V
Vce Saturation (Max) @ Ib, Ic 1V @ 650mA, 5A
Current - Collector Cutoff (Max) 15mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 2A, 5V
Power - Max 60 W
Frequency - Transition 10MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573074-BU406D
Ultra Librarian 3D Model Ultra Librarian BU406D CAD Model

Description

The BU406D is a high-power NPN transistor commonly used in electronic circuits.

  • Power Dissipation: 60W (maximum)
  • Collector-Emitter Voltage: 200V (maximum breakdown)
  • Collector Current: 7A (maximum)
  • Vce Saturation: 1V @ 650mA base current and 5A collector current
  • DC Current Gain (hFE): 15 @ 2A collector current and 5V voltage
  • Mounting Type: Through-hole
  • Package: TO-220-3
  • Operating Temperature: Up to 150°C
  • Suitability: Suitable for applications that require high current and voltage handling.

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