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Same model may have multiple batches, images only for reference.
TIP35E Mospec
Same model may have multiple batches, images only for reference.

TIP35E

Part No TIP35E
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN 140V 25A TO247
Datasheet
TIP35E Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 25 A
Voltage - Collector Emitter Breakdown (Max) 140 V
Vce Saturation (Max) @ Ib, Ic 5V @ 6.25A, 25A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1.5A, 4V
Power - Max 125 W
Frequency - Transition 3MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 684760-TIP35E
Ultra Librarian 3D Model Ultra Librarian TIP35E CAD Model

Description

The TIP35E is an NPN bipolar transistor designed for high-power amplifier and switching applications.

  • Power Dissipation: 125 W
  • Collector-Emitter Voltage (Vce): 140 V
  • Collector Current (Ic): 25 A
  • DC Current Gain (hFE): 25 @ 1.5 A and 4 V
  • Transition Frequency: 3 MHz
  • Package: TO-247
  • Temperature Range: -65°C to 150°C

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