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ISL9V2040P3

Part No ISL9V2040P3
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 430V 10A 130W TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT - 430 V 10 A 130 W Through Hole TO-220-3
Manufacturer ON Semiconductor
Series EcoSPARK®
Package Tube
Part Status Obsolete
Operating Temperature Range -40°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220-3
Family Name ISL9
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number ISL9V2040P3-NDR, ISL9V2040P3_NL, ISL9V2040P3_NL-ND
Quantity per package 400
Popularity High
Supply and Demand Status Balance
Win Source Part Number 922062-ISL9V2040P3
Ultra Librarian 3D Model Ultra Librarian ISL9V2040P3 CAD Model

Description

ISL9V2040P3 - ON Semiconductor

The ISL9V2040P3 is an advanced ignition IGBT (Insulated Gate Bipolar Transistor) designed by ON Semiconductor, tailored for modern ignition coil driver applications. This high-performance IGBT is engineered to provide efficient and reliable performance in electronic ignition systems for automotive applications. The ISL9V2040P3 is part of ON Semiconductor's EcoSPARK® series, which focuses on reducing emissions and improving fuel economy through better energy management in combustion engines.

This robust component boasts a 400V collector-to-emitter breakdown voltage (BV<sub>CEO), which provides a comfortable margin for high-voltage spikes typically found in ignition systems. The ISL9V2040P3 also features a low collector-to-emitter saturation voltage (V<sub>CE(sat)), ensuring minimal power loss during operation and enhancing the overall efficiency of the ignition system.

With a continuous collector current (I<sub>C) rating of 20A at 25°C, the ISL9V2040P3 is capable of handling the demands of most automotive ignition coils. Its robust design also includes a clamped inductive load capability, which is essential for protecting the IGBT during the turn-off phase when the energy from the ignition coil is being discharged.

The ISL9V2040P3 is designed with a monolithic circuit that integrates the ESD (Electrostatic Discharge) protection diodes, which are essential for safeguarding the device against sudden voltage spikes. Additionally, the IGBT features a low gate charge (Q<sub>G), which translates to reduced switching losses and faster operation, thus enabling more efficient engine performance with reduced emissions.

ON Semiconductor has packaged the ISL9V2040P3 in a D2PAK (TO-263) package, which is widely used in automotive environments due to its compact size and excellent thermal performance. The package is designed to ensure reliable operation even under harsh conditions, making it an ideal choice for under-the-hood applications where space and thermal management are critical.

In summary, the ISL9V2040P3 from ON Semiconductor is a state-of-the-art ignition IGBT that offers a combination of high voltage capability, low saturation voltage, robust design, and integrated protection features. It is specifically designed to meet the stringent requirements of modern automotive ignition systems, contributing to more efficient and cleaner combustion engines.

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