The NTD4960N-1G from ON Semiconductor is a high-performance N-Channel Power MOSFET designed to handle high power and efficiency requirements in various applications. This MOSFET is an ideal choice for power management tasks in consumer electronics, automotive, and industrial systems.

Key Features:

• Low R<sub>DS(on): Offers reduced on-state resistance, leading to lower heat generation and higher efficiency in applications.
• High Current Capability: With a continuous drain current (I<sub>D) of up to 30A, this MOSFET can handle high current loads, making it suitable for demanding environments.
• Power Dissipation: Capable of dissipating up to 48W, ensuring reliable operation under high power conditions.
• Operating Temperature: Can operate over a wide temperature range from -55°C to 175°C, accommodating extreme environmental conditions.
• Voltage Rating: Features a drain-to-source voltage (V<sub>DSS) of 30V, which is adequate for many low to medium voltage applications.

Applications:

• DC/DC Converters
• Power Supplies
• Motor Drives
• Automotive Applications
• Switching Regulators

The NTD4960N-1G is housed in a Pb-free, RoHS compliant, and Halogen-free IPAK-3 package, which ensures environmental safety and sustainability. Its compact size makes it suitable for space-constrained applications while maintaining high performance and reliability.

ON Semiconductor's commitment to quality and performance is evident in the NTD4960N-1G N-Channel Power MOSFET, making it a reliable component for designers and engineers looking to optimize their power management systems. With its robust design and advanced technology, this MOSFET is poised to deliver top-notch performance in a variety of applications.