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NTJD2152PT1

Part No NTJD2152PT1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 0.775A SOT-363
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 775mA
Maximum Rds On at Id,Vgs 300 mOhm @ 570mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4nC @ 4.5V
Max Input Capacitance 225pF @ 8V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 102890-NTJD2152PT1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Portable Devices, Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian NTJD2152PT1 CAD Model

Description

The NTJD2152PT1 from ON Semiconductor is a high-performance, dual P-Channel Power MOSFET designed to deliver efficient power management and control. This compact device is ideal for a wide range of applications, including load switching, power management in portable devices, and other situations where a low on-resistance is required.

Key Features

  • Low On-Resistance: The device features a low on-resistance (RDS(on)), which minimizes power losses and improves efficiency, making it suitable for battery-powered applications.
  • Dual P-Channel: Incorporating two P-Channel MOSFETs in a single package, the NTJD2152PT1 allows for compact circuit design and reduces the number of components required on a PCB.
  • Power Saving: With its low threshold voltage, the NTJD2152PT1 helps to reduce power consumption, extending battery life in portable devices.
  • High Current Capability: The device is capable of handling continuous drain currents, making it suitable for high-demand applications.
  • Small Footprint: Housed in a small 6-pin TSOP package, the NTJD2152PT1 saves valuable board space and is ideal for space-constrained applications.
  • RoHS Compliant: The MOSFET is RoHS compliant, ensuring that it meets current environmental standards by avoiding the use of hazardous substances.

Applications

The NTJD2152PT1 is versatile and can be used in various applications, including:

  • Power management for portable devices such as smartphones, tablets, and laptops
  • Load switching in consumer electronics
  • DC/DC converters
  • Battery management systems
  • Charge and discharge switches for battery protection circuits

Technical Specifications

The NTJD2152PT1 boasts impressive technical specifications, including a drain-source voltage (VDS) of -20V, a continuous drain current (ID) of -3A, and a power dissipation of 1.25W. Its low threshold voltage and fast switching capabilities make it an excellent choice for high-speed applications.

For detailed information and complete technical specifications, designers and engineers are encouraged to consult the datasheet provided by ON Semiconductor. The NTJD2152PT1 is a reliable and efficient solution for modern electronic designs requiring dual P-Channel Power MOSFETs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.9385 $75.7540
8+ $15.5394 $124.3152
12+ $15.0543 $180.6516
16+ $14.5680 $233.0880
21+ $14.0829 $295.7409
28+ $12.6265 $353.5420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,900 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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