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BSZ150N10LS3 G

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	BSZ150N10LS3 G
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	BSZ150N10LS3 G Infineon Technologies MOSFETs N-Ch 100V 40A TSDSON-8 datasheet, inventory, & pricing.
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Infineon
Product Category	MOSFETs
RoHS	Details
REACH - SVHC	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TSDSON-8
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	40 A
Rds On - Drain-Source Resistance	15 mOhms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage	1.1 V
Qg - Gate Charge	26 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	63 W
Channel Mode	Enhancement
Tradename	OptiMOS
Packaging	Reel
Brand	Infineon Technologies
Configuration	Single
Fall Time	3.9 ns
Forward Transconductance - Min	21 S
Product Type	MOSFETs
Rise Time	4.6 ns
Series	OptiMOS 3
Factory Pack Quantity Factory Pack Quantity	5000
Subcategory	Transistors
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	23.4 ns
Typical Turn-On Delay Time	8.1 ns
Part # Aliases	SP001002916 BSZ150N10LS3GATMA1
Unit Weight	0.003966 oz
Ultra Librarian 3D Model	Ultra Librarian BSZ150N10LS3 G CAD Model

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BSZ150N10LS3 G

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