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NVMFD5875NLT1G

Part No NVMFD5875NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 7A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Mosfet Array 2 N-Channel (Dual) 60V 7A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN
Case / Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Family Name NVMFD5875
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number NVMFD5875NLT1GOSTR, NVMFD5875NLT1GOSCT, NVMFD5875NLT1GOSDKR, NVMFD5875NLT1G-ND
Quantity per package 1500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887879-NVMFD5875NLT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD5875NLT1G CAD Model

Description

ON Semiconductor NVMFD5875NLT1G - Power MOSFET

The NVMFD5875NLT1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leading force in energy-efficient innovations. This product is designed to meet the demanding requirements of power regulation applications, offering a combination of low on-resistance and high switching speed.

The NVMFD5875NLT1G Power MOSFET is an optimal solution for a variety of power management tasks. It is particularly suitable for use in automotive systems, power supplies, DC-DC converters, and other high-efficiency applications. With its compact footprint, this MOSFET is also a great choice for space-constrained designs.

One of the key features of the NVMFD5875NLT1G is its robust thermal performance. The device is encapsulated in a highly efficient, dual-cooled 5x6mm² DFN package that enhances heat dissipation. This package design, coupled with the MOSFET's low R<sub>DS(on), ensures that the device operates reliably even under high current conditions, contributing to system longevity and reliability.

The NVMFD5875NLT1G boasts a 30V drain-to-source breakdown voltage (V<sub>DSS), with a continuous drain current (I<sub>D) of up to 48A at 25°C. This high current capability, along with its low gate charge (Q<sub>g) and reduced input capacitance (C<sub>iss), make it highly efficient in switching applications, reducing power losses and improving overall system efficiency.

ON Semiconductor has designed the NVMFD5875NLT1G with rigorous standards, ensuring that it meets the requirements for AEC-Q101 qualification, making it suitable for automotive applications. The device also provides protection features such as ESD protection and a maximum junction temperature of 150°C, which safeguards the MOSFET against harsh operating conditions.

In summary, the NVMFD5875NLT1G from ON Semiconductor is an excellent choice for designers looking for a power MOSFET that offers high efficiency, thermal performance, and reliability. Its compact size, combined with its robust feature set, make it a versatile component for a wide range of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.3190 $63.1900
23+ $5.1860 $119.2780
35+ $5.0231 $175.8085
48+ $4.8614 $233.3472
62+ $4.6997 $291.3814
83+ $4.2134 $349.7122
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,320 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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