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SBE002-TL-E

Part No SBE002-TL-E
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 50V 1A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 550 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 80 µA @ 25 V
Capacitance @ Vr, F 52pF @ 10V, 1MHz
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-CPH
Operating Temperature - Junction -55°C ~ 125°C
Base Product Number SBE002
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 663859-SBE002-TL-E
Ultra Librarian 3D Model Ultra Librarian SBE002-TL-E CAD Model

Description

ON Semiconductor SBE002-TL-E: High-Performance Bipolar Junction Transistor

The SBE002-TL-E from ON Semiconductor is a cutting-edge bipolar junction transistor (BJT) that offers a blend of efficiency and performance for a wide range of electronic applications. This component is part of ON Semiconductor's portfolio of high-quality semiconductor products and is designed to meet the rigorous demands of modern electronic circuits.

With its compact surface-mount package, the SBE002-TL-E is ideal for space-constrained applications. The device features a single NPN transistor configuration, which is commonly used in amplification and switching tasks. It is capable of handling moderate power levels while maintaining a low saturation voltage, making it an excellent choice for designs where power efficiency is key.

The SBE002-TL-E boasts a collector-emitter voltage (VCEO) of 50V, which allows it to be used in circuits with higher operating voltages without the risk of breakdown. The collector current (IC) rating of 500mA ensures that the device can control a significant amount of current, making it suitable for driving loads like LEDs, relays, and small motors.

One of the standout features of the SBE002-TL-E is its high current gain (hFE) band, which provides a consistent gain over a wide range of operating conditions. This characteristic is particularly beneficial for analog applications where stable amplification is required. The device also exhibits excellent switching performance, with fast switching times that enable high-speed circuit operation.

ON Semiconductor has designed the SBE002-TL-E with reliability in mind. The device is built using robust materials and manufacturing processes that ensure long-term stability and performance. It is also characterized by low leakage currents and high breakdown voltages, which contribute to the overall durability of the product.

In summary, the SBE002-TL-E from ON Semiconductor is a versatile and reliable BJT that offers a balanced combination of power handling, efficiency, and performance. Its suitability for a diverse range of applications, from power management to signal processing, makes it an excellent choice for designers seeking a high-quality transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4438 $57.7520
100+ $1.1850 $118.5000
155+ $1.1481 $177.9555
210+ $1.1111 $233.3310
270+ $1.0742 $290.0340
360+ $0.9633 $346.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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