ON Semiconductor SS29 Schottky Barrier Rectifier Diode

The ON Semiconductor SS29 is a high-efficiency, metal-to-silicon power diode specifically designed to provide low forward voltage drop and minimal leakage current. This Schottky Barrier Rectifier Diode is a robust component that is ideal for a wide range of applications requiring fast switching and low power loss.

Key Features

• Forward Continuous Current (IF): 2 A
• Maximum Repetitive Reverse Voltage (VRRM): 90 V
• Low Forward Voltage Drop (VF): Typically 0.82 V at IF = 2 A
• Power Dissipation (PD): 1.25 W
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Package: Available in DO-214AA (SMB) package

Applications

The SS29 is suitable for a variety of applications that require efficient power management. It is commonly used in low voltage, high-frequency inverters, free-wheeling, and polarity protection applications. Its small footprint and high efficiency make it perfect for portable devices, power supply units, and automotive applications, contributing to energy savings and extended battery life.

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the SS29 is no exception. It is manufactured with the highest standards to ensure it meets the rigorous demands of industrial and commercial use. The device's robust construction is designed to withstand harsh environments while maintaining its electrical integrity.

Environmental Compliance

In line with ON Semiconductor's dedication to environmental stewardship, the SS29 complies with RoHS (Restriction of Hazardous Substances) directives. This ensures that it is free from harmful substances such as lead, mercury, and cadmium, making it a more environmentally friendly choice for electronic components.