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Same model may have multiple batches, images only for reference.
RJH1BF7RDPQ-80#T2
Same model may have multiple batches, images only for reference.

RJH1BF7RDPQ-80#T2

Part No RJH1BF7RDPQ-80#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description RJH1BF7 - INSULATED GATE BIPOLAR / IGBT 1100 V 60 A 250 W Through Hole TO-247
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ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 1100 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 100 A
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 60A
Power - Max 250 W
Input Type Standard
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Standard Package 49 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891733-RJH1BF7RDPQ-80#T2
Ultra Librarian 3D Model Ultra Librarian RJH1BF7RDPQ-80#T2 CAD Model

Description

The 891733-RJH1BF7RDPQ-80#T2 is a single IGBT (Insulated Gate Bipolar Transistor) from Renesas Electronics America.

  • Function: Discrete semiconductor product
  • Maximum Power: 250 W
  • Maximum Collector-Emitter Breakdown Voltage: 1100 V
  • Maximum Collector Current: 60 A
  • Maximum Pulsed Collector Current: 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
  • Mounting: Through-hole
  • Package: TO-247-3
  • Temperature Range: -40°C to 150°C
  • Status: Obsolete
  • Manufacturer: Renesas Electronics America

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