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Same model may have multiple batches, images only for reference.
UPA2825T1S-E2-AT Real Image
Same model may have multiple batches, images only for reference.

UPA2825T1S-E2-AT

Part No UPA2825T1S-E2-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8HVSON
Datasheet
UPA2825T1S-E2-AT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 57nC @ 10V
Max Input Capacitance 2600pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 16.5W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 24A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Dimension 8-PowerWDFN
Win Source Part Number 053578-UPA2825T1S-E2-AT
Family Name uPA2825T1S
Introduction Date May 29, 2012
ECCN EAR99
Estimated EOL Date 2027
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA2825T1S-E2-AT CAD Model

Description

The Renesas Electronics America uPA2825T1S is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current @ 25°C of 24A (Tc).

  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 24A, 10V
  • Gate-Source Voltage (Max): ±20V
  • Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc)
  • Gate Charge (Max): 57nC @ 10V
  • Input Capacitance (Max): 2600pF @ 10V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Package: 8-PowerWDFN
  • Introduction Date: May 29, 2012
  • Supply and Demand Status: balance.

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Quantity Unit Price Ext. Price
105+ $0.5590 $58.6950
255+ $0.4597 $117.2235
390+ $0.4447 $173.4330
540+ $0.4308 $232.6320
695+ $0.4158 $288.9810
930+ $0.3731 $346.9830
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