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DTC114EUBHZGTL

Part No DTC114EUBHZGTL
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description NPN DIGITAL TRANSISTOR (AEC-Q101 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100 mA 250 MHz 200 mW Surface Mount UMT3F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Not For New Designs
Transistor Type NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max) 100 mA
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case SC-85
Supplier Device Package UMT3F
Base Product Number DTC114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names DTC114EUBHZGTLTR,DTC114EUBHZGTLCT,DTC114EUBHZGTLDKR
Standard Package 3,000
Win Source Part Number 985832-DTC114EUBHZGTL
Ultra Librarian 3D Model Ultra Librarian DTC114EUBHZGTL CAD Model

Description

The DTC114EUBHZGTL is a pre-biased NPN bipolar transistor with a diode manufactured by Rohm Semiconductor. It has a maximum power of 200 mW and a maximum collector current of 100 mA.

  • Type: Pre-biased NPN Bipolar Transistor with Diode
  • Maximum Power: 200 mW
  • Maximum Collector Current: 100 mA
  • Frequency Transition: 250 MHz
  • Vce Saturation: 300mV @ 500μA, 10mA
  • Package/Case: SC-85
  • Mounting: SMD (SMT)
  • Resistor-Base (R1): 10 kOhms
  • Resistor-Emitter Base (R2): 10 kOhms
  • New Designs: Not for new designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,380+ $0.0171 $57.7980
8,200+ $0.0141 $115.6200
12,715+ $0.0136 $172.9240
17,545+ $0.0132 $231.5940
22,525+ $0.0129 $290.5725
30,305+ $0.0115 $348.5075
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Availability: 6,760 pieces
MOQ: 3380 pcs
Order Increment : 1 pcs
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