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Part No STFI10N65K3
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages | MOSFET N-CH 650V 10A I2PAKFP

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Pricing & Ordering $1.7201 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
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Availability: 6,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1Ohm at 3.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 42nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1180pF at 25V
Power Dissipation (Maximum) 35W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAKFP (TO-281)
Manufacturer Package TO-262-3 Full Pack, I2Pak
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260985-STFI10N65K3
Manufacturer Homepage
Popularity Medium
Fake Threat In the Open Market 37 pct.
Supply and Demand Status Limited


STFI10N65K3 - High-Performance N-Channel MOSFET

The STFI10N65K3 is a state-of-the-art N-channel MOSFET from STMicroelectronics, designed to deliver high efficiency and power density for a wide range of applications. This power MOSFET is a part of ST's MDmesh™ K3 series, which is well-known for its fast switching performance, low on-resistance (RDS(on)), and reduced gate charge (Qg), making it an ideal choice for high-efficiency power conversion in both hard-switching and resonant topologies.

With a drain-source voltage (VDS) rating of 650V, the STFI10N65K3 is well-suited to handle the demanding requirements of high-voltage circuits, providing a robust solution for applications such as switched-mode power supplies (SMPS), LED lighting, welding equipment, and solar inverters. Its maximum continuous drain current (ID) of 10A ensures that it can comfortably manage the current requirements of a wide range of electronic devices and systems.

The device is encapsulated in an I2PAK package, which is designed for improved thermal performance and high current capability. This package allows for efficient heat dissipation and ensures reliable operation even under high temperature conditions, extending the lifetime and reliability of both the MOSFET and the application it is used in.

One of the key features of the STFI10N65K3 is its low gate input resistance (Rg), which enables fast switching speeds and reduces switching losses. This is particularly beneficial in applications where efficiency is paramount, and it contributes to the reduction of the overall energy consumption of the system.

The MOSFET also boasts an excellent figure of merit (FOM), which is a measure of the trade-off between RDS(on) and Qg. A low FOM indicates that the device can achieve lower conduction and switching losses, which is crucial for improving the efficiency of power electronic systems.

In summary, the STFI10N65K3 from STMicroelectronics is a robust and efficient solution for designers looking to optimize their power conversion systems. Its combination of high voltage capability, low on-resistance, and fast switching performance makes it a versatile component for a variety of high-performance applications.

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