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STGB20H60DF

Part No STGB20H60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 40A 167W D2PAK / IGBT Trench Field Stop 600 V 40 A 167 W Surface Mount D2PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Power - Max 167 W
Switching Energy 209µJ (on), 261µJ (off)
Input Type Standard
Gate Charge 115 nC
Td (on/off) @ 25°C 42.5ns/177ns
Test Condition 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 90 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number STGB20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-15117-1,497-15117-6,-497-15117-6,-497-15117-2,497-15117-2,497-15117-1
Standard Package 1,000
Win Source Part Number 994947-STGB20H60DF
Ultra Librarian 3D Model Ultra Librarian STGB20H60DF CAD Model

Description

STGB20H60DF - IGBT Transistor from STMicroelectronics

The STGB20H60DF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed to offer a perfect balance between high efficiency and fast switching, making it an ideal choice for a wide range of high-power applications.

Featuring a maximum collector-emitter voltage (VCE) of 600V and a collector current rating of 40A, the STGB20H60DF ensures robust performance in demanding environments. The device is optimized for minimal conduction and switching losses, thanks to its advanced trench gate field-stop technology. This technology not only improves the device's thermal characteristics but also enhances its electrical performance, leading to increased energy savings and reliability in applications.

The STGB20H60DF comes in a TO-263 (D2PAK) package, providing a compact solution without compromising on power handling capabilities. The package is designed to offer excellent heat dissipation, which is critical for maintaining performance and extending the lifetime of the IGBT when operating at high currents and voltages.

One of the key features of this IGBT is its co-packaged freewheeling diode, which is optimized for soft recovery. This characteristic is particularly useful in reducing electromagnetic interference (EMI) and improving the efficiency of circuits that require fast and efficient diode recovery, such as motor drives, uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.

Moreover, the STGB20H60DF boasts a low gate charge (QG) and low on-state voltage drop (VCE(sat)), which contribute to its overall efficiency by reducing the energy required to turn the transistor on and off, and by minimizing the power dissipation during the on-state, respectively.

With its robust construction, the STGB20H60DF ensures high ruggedness and a long operational lifespan, making it a reliable choice for designers looking to optimize their power electronic systems. Whether it's for industrial motor drives, solar inverters, welding equipment, or other high-power applications, the STGB20H60DF from STMicroelectronics offers a compelling solution for efficient and reliable power switching.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9305 $57.9150
75+ $1.5841 $118.8075
115+ $1.5345 $176.4675
160+ $1.4850 $237.6000
205+ $1.4356 $294.2980
270+ $1.2871 $347.5170
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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