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Same model may have multiple batches, images only for reference.
IXBH20N360HV Real Image
Same model may have multiple batches, images only for reference.

IXBH20N360HV

Part No IXBH20N360HV
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 3600V 70A TO-247HV / Bipolar MOS Transistor
Datasheet
IXBH20N360HV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series BIMOSFET
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 3600V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 220A
Vce(on) (Maximum) @ Vge, Ic 3.4V @ 15V, 20A
Power - Max 430W
Switching Energy 15.5mJ (on), 4.3mJ (off)
Input Type Standard
Gate Charge 110nC
Td (on/off) @ 25°C 18ns/238ns
Test Condition 1500V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 1.7μs
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3 Variant
Manufacturer Package TO-247HV
Win Source Part Number 777600-IXBH20N360HV
Popularity Medium
Supply and Demand Status Limited
Introduction Date December 15, 2014
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian IXBH20N360HV CAD Model

Description

The IXYS IXBH20N360HV is a medium popularity electronic component.

  • Series: BIMOSFET
  • Packaging: Tube
  • Mounting Style: Through Hole
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Package: TO-247-3 Variant
  • Maximum Power: 430W
  • Reverse Recovery Time (trr): 1.7μs
  • Current Collector Pulsed (Icm): 220A
  • Switching Energy: 15.5mJ (on), 4.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Test Condition: 1500V, 20A, 10 Ohm, 15V
  • Current Collector (Ic) (Maximum): 70A
  • Voltage Collector Emitter Breakdown (Maximum): 3600V
  • Vce(on) (Maximum) @ Vge, Ic: 3.4V @ 15V, 20A
  • Introduction Date: December 15, 2014
  • Estimated EOL Date: 2030

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