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NXPSC106506Q

Part No NXPSC106506Q
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 650V 10A TO220AC  /  Diode Silicon Carbide Schottky 650 V 10A Through Hole TO-220AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr WeEn Semiconductors
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 250 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
ECCN EAR99
HTSUS 8541.10.0080
Other Names 934072075127
Standard Package 1,000
Win Source Part Number 959149-NXPSC106506Q
Ultra Librarian 3D Model Ultra Librarian NXPSC106506Q CAD Model

Description

The NXPSC106506Q is a diode rectifier component manufactured by WeEn Semiconductors.

  • Type: Silicon Carbide Schottky Diode
  • Maximum DC Reverse Voltage: 650V
  • Average Rectified Current: 10A
  • Reverse Recovery Time: 0ns
  • Forward Voltage: 1.7V @ 10A
  • Capacitance: 300pF @ 1V and 1MHz
  • Package/Case: TO-220-2
  • Win Source Part Number: 959149-NXPSC106506Q

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