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Same model may have multiple batches, images only for reference.
IRFZ24NSTRR Real Image
Same model may have multiple batches, images only for reference.

IRFZ24NSTRR

Part No IRFZ24NSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 17A D2PAK
Datasheet
IRFZ24NSTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 100546-IRFZ24NSTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ24NSTRR CAD Model

Description

The Infineon Technologies 100546-IRFZ24NSTRR is a MOSFET technology N-channel polarity discrete semiconductor product.

  • Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 17A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 370pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 70 mOhm @ 10A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: D2PAK

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