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STGB30V60DF

Part No STGB30V60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 60A 258W D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 27 Weeks
Features IGBT Trench Field Stop 600 V 60 A 258 W Surface Mount D2PAK
Manufacturer STMicroelectronics
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK
Family Name STGB30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -497-15120-6, -497-15120-2, 497-15120-2, 497-15120-1, -497-15120-1, 497-15120-6
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 897982-STGB30V60DF
Ultra Librarian 3D Model Ultra Librarian STGB30V60DF CAD Model

Description

STGB30V60DF - IGBT from STMicroelectronics

The STGB30V60DF is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leading semiconductor manufacturer renowned for its innovative and reliable products. This IGBT is designed to meet the demands of a wide range of high-power applications, offering a perfect blend of low conduction losses and high switching speeds.

With a collector-emitter voltage (V<sub>CE) of 600V and a collector current rating of 30A, the STGB30V60DF is capable of handling significant power levels, making it an ideal choice for applications such as motor drives, uninterruptible power supplies (UPS), inverter circuits, and general-purpose power amplifiers. Its robustness is further enhanced by a maximum junction temperature of 175°C, ensuring reliable operation even under strenuous conditions.

One of the standout features of the STGB30V60DF is its Field Stop technology, which allows for thinner wafers and optimized carrier distribution. This results in reduced V<sub>CE(sat) (collector-emitter saturation voltage), which minimizes on-state power dissipation and improves efficiency. Additionally, the device boasts a positive V<sub>CE(sat) temperature coefficient, simplifying the paralleling of multiple IGBTs when higher current handling is required.

The STGB30V60DF also incorporates a fast and soft recovery anti-parallel diode. This diode is crucial for reducing electromagnetic interference (EMI) and ensuring smooth switching performance, which is particularly important in high-frequency applications. The device's package is TO-263 (D2PAK), a surface-mount package that facilitates efficient heat dissipation and is suitable for compact PCB layouts.

Whether you're designing energy-efficient motor controllers or robust power management systems, the STGB30V60DF offers the performance and reliability you need. Its combination of cutting-edge technology and practical design considerations makes it a go-to choice for engineers looking to optimize their high-power electronic designs.

For detailed specifications and application support, visit the STMicroelectronics website or contact their technical support team to ensure the STGB30V60DF meets your project's requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4271 $51.4065
36+ $2.8120 $101.2320
56+ $2.7241 $152.5496
76+ $2.6362 $200.3512
99+ $2.5483 $252.2817
132+ $2.2847 $301.5804
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 550 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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