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Same model may have multiple batches, images only for reference.
IRGP4063PBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4063PBF

Part No IRGP4063PBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR | IGBT 600V 96A 330W TO247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 96A
Current - Collector Pulsed (Icm) 144A
Vce(on) (Maximum) at Vge, Ic 2.14V at 15V, 48A
Maximum Power 330W
Switching Energy 625μJ (on), 1.28mJ (off)
Input Type Standard
Gate Charge 95nC
Td (on/off) at 25°C 60ns/145ns
Test Condition 400V, 48A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AC
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1188365-IRGP4063PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP4063PBF CAD Model

Description

The IRGP4063PBF is an IGBT transistor manufactured by Infineon Technologies.

  • Type: Trench IGBT
  • Collector-Emitter Breakdown Voltage: 600V
  • Collector Current: 96A
  • Maximum On-State Voltage: 2.14V @ 15V gate-emitter voltage and 48A collector current
  • Gate Charge: 95nC
  • Switching Energy (On): 625μJ
  • Switching Energy (Off): 1.28mJ
  • Package: TO-247AC
  • Application: discrete semiconductor products

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129+ $2.6900 $347.0100
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