The 145257-HGT1S12N60B3S is a single IGBT transistor designed for use in discrete semiconductor products. It is a high-power device with a maximum power rating of 104 W. The IGBT has a voltage breakdown rating of 600 V, allowing it to handle high voltage applications. It has a maximum collector current rating of 27 A and a maximum pulsed collector current rating of 110 A. The IGBT has a low on-state voltage of 2.1V at a gate-emitter voltage of 15V and a collector current of 12A. It has a fast switching time of 26ns for turn-on and 150ns for turn-off. The IGBT has a gate charge of 68 nC and a switching energy of 304μJ for turn-on and 250μJ for turn-off. It is designed for surface mount mounting and comes in a TO-263-3, D²Pak package. The 145257-HGT1S12N60B3S is an active product from Harris Corporation.