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Categories Discrete Semiconductor Products
Features IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-3P
Manufacturer STMicroelectronics
Package Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-3P-3, SC-65-3
Case / Package TO-3P
Family Name STGWT80
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-14234-5, -497-14234-5
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898014-STGWT80H65DFB
Ultra Librarian 3D Model Ultra Librarian STGWT80H65DFB CAD Model

Description

STGWT80H65DFB - High-Efficiency Power Transistor from STMicroelectronics

The STGWT80H65DFB is a state-of-the-art power transistor from STMicroelectronics, designed to cater to the demanding requirements of modern high-efficiency power conversion applications. This advanced semiconductor device is part of STMicroelectronics' MDmesh™ DM6 family, which is renowned for its excellent performance in high voltage applications.

With a maximum operating voltage of 650V, the STGWT80H65DFB is well-suited for a variety of power applications, including switch-mode power supplies (SMPS), lighting applications, solar inverters, welding equipment, and other high-performance converters. It offers a unique combination of low on-resistance and high switching speed, resulting in reduced conduction and switching losses, which are critical for improving energy efficiency.

One of the key features of the STGWT80H65DFB is its trench gate field-stop structure, which ensures low gate charge and capacitance, leading to minimized switching energy. The transistor is built using STMicroelectronics' advanced silicon technology, which provides robustness and reliability even under harsh operating conditions.

The STGWT80H65DFB also boasts a low threshold voltage, which contributes to better thermal performance and simpler drive circuitry. This makes it an ideal choice for applications where thermal management is a concern, and where ease of design and implementation are prioritized.

Encased in a TO-247 long leads package, the STGWT80H65DFB ensures excellent heat dissipation and allows for flexible mounting options. This package is well-known for its ability to handle high current and high temperature, making it a robust choice for industrial and commercial applications.

For engineers and designers looking to push the boundaries of power density and efficiency, the STGWT80H65DFB offers a compelling solution. Its superior electrical characteristics and thermal performance make it a key component for next-generation power conversion systems. With STMicroelectronics' commitment to quality and innovation, users can expect reliable and high-performing operation from the STGWT80H65DFB power transistor.

For detailed specifications, application notes, and additional resources, visit the STMicroelectronics website or contact their support team for technical assistance.

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