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STH400N4F6-6

Part No STH400N4F6-6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.15mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 404 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20500 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number STH400
Other Names -497-14537-2,-497-14537-1,497-14537-6,STH400N4F6-6,-497-14537-6,497-14537-2,497-14537-1
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278166-STH400N4F6-6
Ultra Librarian 3D Model Ultra Librarian STH400N4F6-6 CAD Model

Description

STH400N4F6-6 Power MOSFET by STMicroelectronics

The STH400N4F6-6 is a high-performance N-channel Power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to meet a wide range of energy-efficient applications, particularly focusing on high switching efficiency and reliability. It is an ideal choice for power supply, motor control, automotive, and other power-intensive applications.

This Power MOSFET is built using STMicroelectronics' advanced MDmesh™ technology, which combines low on-resistance (R<sub>DS(on)) with a high threshold voltage (V<sub>th), making it an excellent performer in terms of switch-on and switch-off times. The STH400N4F6-6 is specifically designed to achieve extremely low gate charge (Q<sub>g) and low capacitances, which further enhances its efficiency in fast-switching applications.

Featuring a maximum continuous drain current (I<sub>D) of 80 A and a drain-source voltage (V<sub>DS) of up to 40 V, the STH400N4F6-6 can handle high current and voltage levels, making it robust for challenging environments. The device operates over a wide temperature range, ensuring reliable performance under varying conditions.

The STH400N4F6-6 is housed in an H2PAK-6 package, which is designed for improved thermal performance and compactness, allowing for better space utilization in circuit designs. The package is also RoHS compliant and Halogen-free, ensuring it meets the latest environmental standards and is suitable for use in environmentally sensitive applications.

Key features of the STH400N4F6-6 include:

  • Low threshold voltage (V<sub>th) for improved conduction
  • High drain current (I<sub>D) capability for high power applications
  • Low gate charge (Q<sub>g) for faster switching
  • 100% avalanche tested for enhanced reliability
  • Low intrinsic capacitances for reduced switching losses
  • High dv/dt capability for robustness against harsh conditions

With its advanced features and robust design, the STH400N4F6-6 from STMicroelectronics is an excellent choice for engineers looking to optimize their power management systems for efficiency and reliability.

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