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STN9360

Part No STN9360
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description High voltage fast-switching PNP power transistor
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Transistor Type PNP
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 600V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 10mA, 100mA
Current - Collector Cutoff (Maximum) 10μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 120 @ 20mA, 5V
Power - Max 1.6W
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package TO-261-4, TO-261AA
Manufacturer Package SOT-223
Win Source Part Number 1261640-STN9360
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STN9360
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian STN9360 CAD Model

Description

STN9360 - STMicroelectronics N-Channel MOSFET

The STN9360 from STMicroelectronics is a high-performance N-Channel MOSFET that is designed to meet the needs of a wide range of electronic applications. This power MOSFET is a part of ST's STripFET™ series, which is renowned for its low on-resistance and low gate charge, making it an efficient solution for power management tasks.

With a drain-source voltage (VDS) of 600V, the STN9360 is capable of handling high voltage operations while maintaining a low threshold voltage (VGS(th)) to ensure low voltage drive capability. The device features a continuous drain current (ID) of up to 4A, which allows it to drive significant loads without overheating.

The STN9360's low on-resistance (RDS(on)) minimizes conduction losses, which is critical for improving energy efficiency in power supply applications. This characteristic, combined with a low gate charge (Qg), results in reduced switching losses, thus enhancing the overall performance of the MOSFET in high-frequency switching applications such as switching regulators, converters, and power management systems.

The device is encapsulated in a TO-220 package, which is widely used and known for its good thermal performance. This package allows for efficient heat dissipation, ensuring that the MOSFET operates within safe temperature ranges even under high current conditions. The TO-220 package also makes the STN9360 easy to integrate into various circuit designs due to its industry-standard footprint.

Additionally, the STN9360 boasts robustness with its fast switching speed and a body diode with low reverse recovery time (trr), which is beneficial in applications where fast diode recovery is critical. Its high avalanche ruggedness ensures reliability and a long operational lifespan even under stressful conditions, such as during voltage spikes or power surges.

In conclusion, the STN9360 N-Channel MOSFET from STMicroelectronics is a versatile and reliable component that offers efficiency, durability, and high performance for a variety of power management tasks. Its technical features make it an ideal choice for engineers looking to optimize their designs for better power efficiency and thermal management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,200 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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