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STP13N65M2

Part No STP13N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 10A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 650 V 10A (Tc) 110W (Tc) Through Hole TO-220
Manufacturer STMicroelectronics
Series MDmesh™ M2
Package Tube
Operating Temperature Range 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STP13
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935535-STP13N65M2
Ultra Librarian 3D Model Ultra Librarian STP13N65M2 CAD Model

Description

STP13N65M2 - N-channel 650 V, 0.28 Ohm typ., 11 A MDmesh™ M2 Power MOSFET in TO-220 Package

The STP13N65M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed to meet the stringent requirements of today's power electronic applications. This device is a part of the MDmesh™ M2 series, which is well-known for its excellent efficiency and thermal performance, making it suitable for a wide range of power conversion applications, including switch-mode power supplies, lighting, and high-efficiency converters.

With a drain-source voltage (V<sub>DS) of 650 V, the STP13N65M2 ensures safe operation even under high voltage conditions. Its low on-resistance (R<sub>DS(on)) of only 0.28 Ohm typ. at V<sub>GS = 10 V contributes to its high efficiency, reducing conduction losses and improving overall system performance. The device is capable of handling continuous drain currents (I<sub>D) up to 11 A, making it suitable for handling moderate power levels in electronic circuits.

The MOSFET comes in a robust TO-220 package, which is widely used in the industry and offers a good balance between size and thermal performance. Its through-hole design ensures easy mounting on printed circuit boards and provides excellent heat dissipation characteristics, which is crucial for maintaining reliability and longevity in high-power applications.

Key features of the STP13N65M2 include:

  • High breakdown voltage (V<sub>DS) of 650 V to withstand high voltage spikes
  • Low threshold voltage (V<sub>GS(th)) for improved efficiency at low gate voltages
  • Low gate charge (Q<sub>g) which enhances switching performance
  • Fast recovery diode for enhanced switching speed and reduced switching losses

STMicroelectronics' commitment to innovation is evident in the STP13N65M2 MOSFET, which incorporates advanced MDmesh™ M2 technology. This technology optimizes the device for high switching frequencies and minimal power dissipation, making it an excellent choice for energy-sensitive applications.

In summary, the STP13N65M2 is a versatile and reliable component that offers a combination of high voltage capability, low on-resistance, and efficient switching performance, all packed in a practical TO-220 package. It is a testament to STMicroelectronics' dedication to providing advanced power solutions that cater to the evolving needs of modern electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,020 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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