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NVB5405NT4G

Part No NVB5405NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description NVB5405 - SINGLE N-CHANNEL POWER / N-Channel 40 V 16.5A (Ta), 116A (Tc) 3W (Ta), 150W (Tc) Surface Mount D²PAK
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 16.5A, 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 32 V
Power Dissipation (Max) 3W, 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package D2PAK
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) Vendor Undefined
REACH Status REACH Unaffected
Other Part Number 2156-NVB5405NT4G-488
Standard Package 1
Win Source Part Number 1324720-NVB5405NT4G
Ultra Librarian 3D Model Ultra Librarian NVB5405NT4G CAD Model

Description

ON Semiconductor NVB5405NT4G Power MOSFET

The ON Semiconductor NVB5405NT4G is a high-performance Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This device is part of ON Semiconductor's extensive portfolio of semiconductor solutions that are known for their reliability and innovation.

With a drain-to-source voltage (Vdss) of 25V, the NVB5405NT4G is capable of handling moderate voltage operations with ease. It boasts a continuous drain current (Id) of 40A, allowing it to accommodate high current demands without compromising performance. The low on-state resistance (Rds on) of just 8.5mΩ at Vgs of 10V ensures minimal power loss during operation, making it an energy-efficient choice for designers.

One of the key features of the NVB5405NT4G is its advanced single N-channel configuration, which simplifies circuit design by reducing the number of components required. The device comes in a compact DPAK (TO-252) package, which not only saves space on the PCB but also provides excellent thermal performance, ensuring the MOSFET operates within its safe temperature range even under high load conditions.

Engineered to provide fast switching performance, the NVB5405NT4G is suitable for a variety of power switching applications, including DC/DC converters, motor drives, and power management systems. Its robustness is further enhanced by features such as its maximum junction temperature of 175°C and its ability to withstand ESD events, contributing to a longer operational lifespan and reduced maintenance costs.

Whether you are designing for automotive, industrial, or consumer electronics, the NVB5405NT4G offers a combination of efficiency, durability, and versatility. ON Semiconductor's commitment to quality ensures that this Power MOSFET will deliver consistent performance, making it a reliable choice for your power management needs.

Product Specifications:

  • Voltage - Drain-Source (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 8.5mΩ @ 20A, 10V
  • Package / Case: DPAK (TO-252)
  • Operating Temperature: -55°C ~ 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3940 $59.8500
59+ $1.9643 $115.8937
92+ $1.9030 $175.0760
126+ $1.8415 $232.0290
163+ $1.7802 $290.1726
218+ $1.5960 $347.9280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,390 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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