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IXTK8N150L

Part No IXTK8N150L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1500V 8A TO264 / N-Channel 1500 V 8A (Tc) 700W (Tc) Through Hole TO-264 (IXTK)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 4A, 20V
Vgs(th) (Max) @ Id 8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V
Power Dissipation (Max) 700W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA
Base Product Number IXTK8
Standard Package 25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346843-IXTK8N150L
Ultra Librarian 3D Model Ultra Librarian IXTK8N150L CAD Model

Description

The IXTK8N150L is an N-Channel MOSFET transistor from the Linear series of IXYS.

  • Package: TO-264-3, TO-264AA
  • Drain to Source Voltage (Vdss): 1500 V
  • Maximum Power Dissipation: 700W (Tc)
  • Maximum Gate-Source Voltage (Vgs): ±30V
  • Temperature Range: -55°C to 150°C (TJ)
  • Current-Continuous Drain (Id): 8A (Tc)
  • Maximum On-Resistance (Rds On): 3.6Ohm @ 4A, 20V
  • Gate Charge (Qg): 250 nC @ 15 V
  • Input Capacitance (Ciss): 8000 pF @ 25 V

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