The IPL65R070C7 is a CoolMOS™ C7 power MOSFET from Infineon Technologies. It is designed for high-efficiency switched-mode power supplies (SMPS), server power supplies, telecom rectifiers, and other power electronics applications. The CoolMOS™ C7 technology provides low on-resistance (Rds(on)), reduced switching losses, and improved efficiency compared to previous generations of MOSFETs.

Applications

• Switched-Mode Power Supplies (SMPS)
• Server Power Supplies
• Telecom Rectifiers
• Uninterruptible Power Supplies (UPS)
• Industrial Power Supplies

Features

• CoolMOS™ C7 Technology
• Low On-Resistance (Rds(on))
• Reduced Switching Losses
• High Avalanche Ruggedness
• Integrated Gate Resistor
• Pb-free Lead Plating; RoHS Compliant

Benefits

• Improved efficiency resulting in reduced power consumption and lower operating temperatures.
• Reduced system costs due to the need for smaller heatsinks.
• Enhanced reliability due to the high avalanche ruggedness.
• Simplified design through the integrated gate resistor which eliminates the need for an external gate resistor in some applications.
• Environmentally friendly due to Pb-free lead plating and RoHS compliance.

Technical Specifications

The IPL65R070C7 has a drain-source voltage (Vds) rating of 650V and a typical on-resistance (Rds(on)) of 70 mΩ. It is designed for high-speed switching with low gate charge (Qg) and output capacitance (Coss). The avalanche energy rating (EAS) is high, providing robustness against voltage transients. The integrated gate resistor helps to dampen oscillations and reduce EMI. The specific values for these and other parameters, such as gate threshold voltage (Vgs(th)), continuous drain current (Id), and thermal resistance (Rth), can be found in the device datasheet. The device is typically packaged in a TO-220 or similar power package.

The IPL65R070C7's CoolMOS™ C7 technology reduces conduction and switching losses, resulting in improved efficiency and lower operating temperatures. The high avalanche ruggedness provides robustness against voltage spikes. The integrated gate resistor simplifies the design and reduces the component count. The device's high voltage rating and low on-resistance make it suitable for a variety of high-power applications. The package and thermal resistance allow for effective heat dissipation.