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IXTH5N100A

Part No IXTH5N100A
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 5A TO247 / N-Channel 1000 V 5A (Tc) 180W (Tc) Through Hole TO-247 (IXTH)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V
Power Dissipation (Max) 180W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247 (IXTH)
Case / Package TO-247-3
Base Product Number IXTH5
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number IXTH5N100A-NDR,Q917004
Standard Package 30
Win Source Part Number 1324560-IXTH5N100A
Ultra Librarian 3D Model Ultra Librarian IXTH5N100A CAD Model

Description

The IXYS IXTH5N100A is a MOSFET transistor that is widely used in various electronic devices.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 1000V
  • Maximum Continuous Drain Current: 5A (Tc)
  • Maximum Rds On: 2Ohm @ 2.5A, 10V
  • Maximum Gate Charge (Qg): 130 nC @ 10 V
  • Input Capacitance (Ciss): 2600pF @ 25Vds
  • Maximum Vgs: ±20V
  • Power Dissipation: 180W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.7594 $63.3534
25+ $4.7257 $118.1425
38+ $4.5781 $173.9678
53+ $4.4303 $234.8059
68+ $4.2827 $291.2236
91+ $3.8397 $349.4127
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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