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Same model may have multiple batches, images only for reference.
BSD840N L6327 Real Image
Same model may have multiple batches, images only for reference.

BSD840N L6327

Part No BSD840N L6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.88A SOT363 / Mosfet Array 2 N-Channel (Dual) 20V 880mA 500mW Surface Mount PG-SOT363-PO
Datasheet
BSD840N L6327 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon Technologies
Packaging Reel - TR
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 880mA
Rds On (Max) @ Id, Vgs 400mOhm @ 880mA, 2.5V
Vgs(th) (Max) @ Id 750mV @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs 0.26nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 10V
Power - Max 500mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO
Base Product Number BSD840
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number BSD840NL6327,SP000464874,BSD840N L6327-ND
Standard Package 3,000
Win Source Part Number 1324674-BSD840N L6327
Ultra Librarian 3D Model Ultra Librarian BSD840N L6327 CAD Model

Description

The Infineon Technologies BSD840N L6327 is a 2 N-Channel (Dual) MOSFET transistor array designed for surface mount mounting.

  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 880mA @ 25°C
  • Maximum On-Resistance (Rds On): 400mOhm @ 880mA, 2.5V
  • Maximum Gate-Source Threshold Voltage (Vgs(th)): 750mV @ 1.6μA
  • Maximum Gate Charge (Qg): 0.26nC @ 2.5V
  • Maximum Input Capacitance (Ciss): 78pF @ 10V
  • Power Dissipation: 500mW
  • Temperature Range: -55°C to 150°C
  • Package: PG-SOT363-PO
  • Status: Obsolete

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